Method of direct electrodeposition on semiconductors
AssigneeInternational Business Machines Corporation
InventorsLaura L. Kosbar, Xiaoyan Shao
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Abstract
The present disclosure provides a method of electrodeposition of a metal or metal alloy on at least one surface of a semiconductor material. The method of the present invention provides full coverage of an electrodeposited metallic film on the at least one surface of the semiconductor material. The method of the present disclosure includes providing a semiconductor material. A metallic film is applied to at least one surface of the semiconductor material by an electrodeposition process. The electrodeposition process employed uses current waveforms that apply a low current density initially, and after a predetermined period of time, the current density is changed to a high current density.
Claims27
A method of forming a metallic film on a surface of a semiconductor material comprising:
- providing a semiconductor material having at least one surface;
- and
- electrodepositing a metallic film on the at least one surface of the semiconductor material, wherein said electrodepositing includes electroplating a metal or metal alloy from an electroplating bath in which a first current density is employed for a first period of time, and after said first period of time, a second current density is applied for a second period of time, wherein said first current density is lower than the second current density.
A method of forming a metallic film on a surface of a semiconductor material comprising:
- providing a semiconductor material having at least one surface;
- and
- electrodepositing a metallic film on the at least one surface of the semiconductor material, wherein said electrodepositing includes a waveform comprising a low current density of from 5 mAmps/cm2 to 40 mAmps/cm2 performed for a first period of time, followed by a high current density of greater than 40 mAmps/cm2 performed for a second period of time.
Dependencies are inferred from the claim text.