Plasma processing apparatus using transmission electrode
AssigneeHitachi High-Technologies Corporation
InventorsKeizo SUZUKI, Ken Takei, Takehito Usui, Masami Kamibayashi, Nobuyuki Negishi
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AssigneeHitachi High-Technologies Corporation
InventorsKeizo SUZUKI, Ken Takei, Takehito Usui, Masami Kamibayashi, Nobuyuki Negishi
Estimating the term…
The present invention provides a plasma processing apparatus in which a plasma distribution, a plasma potential, an etching characteristic or a surface processing characteristic varies in time and spatially, and controllability and reliability are high. In the plasma processing apparatus, at least part of a discharge forming electromagnetic wave is introduced into a processing chamber through a transmission electrode. The transmission electrode is provided with a transmission electrode layer as at least part of constituent elements therefor. Slender-shaped slot opening areas are densely formed in the transmission electrode layer. The transmission electrode behaves like a material having electrical conductivity for an RF bias electromagnetic wave or ion plasma vibrations, thereby implementing high stability and high reliability of plasma characteristics and plasma processing characteristics.
A plasma processing apparatus for performing plasma processing, comprising:
A plasma processing apparatus for performing plasma processing, comprising:
Dependencies are inferred from the claim text.