Photoelectric Conversion Element and Solar Cell
OwnerTadahiro Ohmiinventor
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Abstract
Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n+-type a-Si layer is in contact with a transparent electrode formed by an n+-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.
Claims11
A photoelectric conversion element comprising a first electrode layer, a second electrode layer, and one or a plurality of power generating laminates provided between the first and second electrode layers,
- wherein the power generating laminate comprises a p-type semiconductor layer, an i-type semiconductor layer formed in contact with the p-type semiconductor layer, and an n-type semiconductor layer formed in contact with the i-type semiconductor layer,
- wherein the n-type semiconductor layer of said one power generating laminate or the n-type semiconductor layer of a first electrode side power generating laminate placed on the first electrode side of said plurality of power generating laminates is brought into contact with the first electrode layer and the p-type semiconductor layer of said one power generating laminate or the p-type semiconductor layer of a second electrode side power generating laminate placed on the second electrode side of said plurality of power generating laminates is brought into contact with the second electrode layer, and
- wherein the first electrode layer contains ZnO at least at a portion which is brought into contact with the n-type semiconductor layer.
Dependencies are inferred from the claim text.