Iii-v nitride-based thermoelectric device
AssigneeThe Regents of the University of California
InventorsHiroaki Ohta, Alexander Sztein, Steven P. DenBaars, Shuji Nakamura
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Abstract
A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.
Claims19
A Group III-V nitride thermoelectric device.
A device, comprising:
- a thermoelectric device comprising a group III-V nitride semiconductor film including stacking faults or dislocations.
A thermoelectric device comprising:
- a group III-V nitride semiconductor film containing indium (In) or Aluminium (Al).
Dependencies are inferred from the claim text.