Composition and method for cleaning semiconductor substrates
OwnerWai Mun Leeinventor
Life of this patent
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Abstract
The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at a mole ratio of about 1:1 to about 10:1 in water, and pH is adjusted to from about 6 to about 10 with a basic compound, and optionally a surfactant. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. One of the embodiment is the method of using the compositions in dilution, wherein the solution may be diluted with DI water at dilution ratios, for example, of up to 1:10, up to 1:50, up to 1:100, up to 1:150, up to 1:250, and up to about 1:500 or any ratios therein.
Claims18
A cleaning solution comprises
- a. from about 25% to about 50% by weight of an alkyl diphosphonic acid of the basic structure:
- wherein R1 and R2 are either the same or different and select from the group consisting of hydrogen (H), hydroxide (OH), chloride (Cl), alkyl or aryl having between 1 to about 8 carbon atoms and alkyl or aryl amine;
- b. at least one or more second acidic compound or mixtures thereof;
- c. a buffering amount of one or more basic compounds to adjust pH from about 6 to about 10;
- d. from 0% by weight and up to 5% by weight of a surfactant;
- and
- e. water.
A method of cleaning semiconductor substrates comprising the steps of:
- i. providing a substrate having a surface comprising copper-containing conductor and a low-k dielectric material and one or more of etching residue, planarization residue, and copper oxide disposed on the surface, which generated from a damascene or dual damascene manufacturing processes or thereof;
- ii. contacting the surface of the substrate with an effective amount of solution comprising:
- a. from about 25% to about 50% by weight of an alkyl diphosphonic acid of the basic structure:
- wherein R1 and R2 are either the same or different and select from the group consisting of hydrogen (H), hydroxide (OH), chloride (Cl), alkyl or aryl having between 1 to about 8 carbon atoms and alkyl or aryl amine;
- b. at least one or more of a second acidic compound;
- c. a buffering amount of one or more basic compounds to adjust pH from about 6 to about 10;
- d. from 0% by weight and up to 5% by weight of a surfactant;
- and
- e. water
- for a time and at a temperature sufficient to remove the resist, residues, and/or copper oxide.
Dependencies are inferred from the claim text.