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AssigneeSeiko Epson Corporation
InventorsKatsumi MORI, Kei KAWAHARA, Yoshikazu KASUYA
Estimating the term…
A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row direction, and first virtual linear lines L1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L2.
A method for generating mask data that is used for a method for manufacturing a semiconductor device, the semiconductor device including a first wiring layer and a plurality of dummy wiring layers provided in an identical level as the first wiring layer, wherein, assuming a row direction and first virtual linear lines extending in a direction that traverses the row direction, the first virtual linear lines and the row direction define an angle of 2-40 degree, and the dummy wiring layers are disposed on the first virtual linear lines, the method for generating mask data comprising:
A method for generating mask data that is used for a method for manufacturing a semiconductor device, the semiconductor device comprising a first wiring layer and a plurality of dummy wiring layers provided in an identical level as the second wiring layer, wherein, assuming a column direction and second virtual linear lines extending in a direction that traverses the column direction, the second virtual linear lines and the column direction define an angle of 2-40 degrees, and the plurality of dummy wiring layers are disposed on the second virtual linear lines, the method for generating mask data comprising:
A method for generating mask data that is used for a method for manufacturing a semiconductor device, the semiconductor device comprising a first wiring layer and a plurality of dummy wiring layers provided in an identical level as the first wiring layer, wherein the dummy wiring layer has a plane configuration that is generally square, a gap between adjacent ones of the dummy wiring layers that are disposed in the row direction is about a half of a side of the dummy wiring layer, the adjacent ones of the dummy wiring layers that are disposed in the row direction are offset in the column direction, and a width shifted in the column direction of the dummy wiring layers is about a half of a side of the dummy wiring layer, the method for generating mask data comprising:
Dependencies are inferred from the claim text.