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US 2011/0239081 A1Published application
Semiconductor storage device and method for controlling a semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorsToshikatsu Hida, Kouji Watanabe
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Abstract
According to one embodiment, write data is written in a nonvolatile semiconductor memory with a first error correction code and a second error correction code attached to the write data. The first error correction code and the write data are read out from the nonvolatile semiconductor memory to perform first error correction processing. When there is a remaining error, the second error correction code corresponding to the write data is read out to carry out second error correction processing.
Claims20
A semiconductor storage device comprising:
- a nonvolatile semiconductor memory;
- a writing processing unit that writes, in the nonvolatile semiconductor memory, write data having a predetermined size, an error detection code generated to detect an error in the write data, a first error correction code generated to correct an error in first encoding target data including the write data and the error detection code corresponding to the write data, and a second error correction code generated to correct an error in a second encoding target data including a singularity or a plurality of the first encoding target data;
- a first error correction processing unit that carries out first error correction processing for the write data using the write data, the error detection code, and the first error correction code read out from the nonvolatile semiconductor memory and determines whether there is an error remaining in the write data after the first error correction processing;
- a second error correction processing unit that carries out second error correction processing for the write data using the second encoding target data including the write data determined as having the remaining error by the first error correction processing unit and the second error correction code read out from the nonvolatile semiconductor memory;
- a readout determining unit that determines, based on a determination result by the first error correction processing unit for the write data in the second encoding target data, whether the second error correction code corresponding to the second encoding target data is read out from the nonvolatile semiconductor memory;
- and
- a readout control unit that controls, based on a result of the determination by the readout determining unit, readout from the nonvolatile semiconductor memory.
4 more elements
A semiconductor storage device comprising:
- a nonvolatile semiconductor memory;
- a writing processing unit that writes, in the nonvolatile semiconductor memory, write data having a predetermined size, an error detection code generated to detect an error in the write data, and an error correction code generated to correct an error in encoding target data including the write data and the error detection code corresponding to the write data;
- an error detection processing unit that determines, based on the write data and the error detection code read out from the nonvolatile semiconductor memory, whether there is an error in the write data;
- an error correction processing unit that carries out error correction processing for the write data using the encoding target data including the write data determined as having the error by the error detection processing unit and the error correction code read out from the nonvolatile semiconductor memory;
- a readout determining unit that determines, based on a determination result by the error detection processing unit for the write data in the encoding target data, whether the error correction code corresponding to the encoding target data is read out from the nonvolatile semiconductor memory;
- and
- a readout control unit that controls, based on a result of the determination by the readout determining unit, readout from the nonvolatile semiconductor memory.
4 more elements
A control method for a semiconductor storage device, comprising:
- writing, in the nonvolatile semiconductor memory, write data having a predetermined size, an error detection code generated to detect an error in the write data, a first error correction code generated to correct an error in first encoding target data including the write data and the error detection code corresponding to the write data, and a second error correction code generated to correct an error in a second encoding target data including a singularity or a plurality of the first encoding target data;
- carrying out first error correction processing for the write data using the write data, the error detection code, and the first error correction code read out from the nonvolatile semiconductor memory and determining whether there is an error remaining in the write data after the first error correction processing;
- carrying out second error correction processing for the write data using the second encoding target data including the write data determined as having the remaining error after the first error correction processing and the second error correction code read out from the nonvolatile semiconductor memory;
- determining, based on a result of the determination concerning whether there is an error remaining in the write data after the first error correction processing, whether the second error correction code corresponding to the second encoding target data is read out from the nonvolatile semiconductor memory;
- and
- controlling, based on a result of the determination concerning whether the second error correction code corresponding to the second encoding target data is read out from the nonvolatile semiconductor memory, readout from the nonvolatile semiconductor memory.
3 more elements
Dependencies are inferred from the claim text.