Ion implantation distribution generation method and simulator

A computer-readable storage medium for storing a computer-executable program for causing a computer to function as a simulator which generates an ion implantation distribution, the program causing the computer to perform:

• generating distributions related to Rp lines each representing a range projection Rp in a surface subjected to ion implantation in a device structure of a semiconductor integrated circuit;
• drawing the Rp lines on a two-dimensional diagram corresponding to an ion implantation condition;
• and
• generating, for each of the Rp lines, a two-dimensional impurity concentration distribution in accordance with two-dimensional vector coordinates provided to the Rp line.

A process device simulator for evaluating an electrical characteristic by using an ion implantation distribution, the simulator comprising:

• means for generating distributions related to Rp lines each representing a range projection Rp in a surface subjected to ion implantation in a device structure of a semiconductor integrated circuit;
• means for drawing the Rp lines on a two-dimensional diagram or a three-dimensional diagram corresponding to an ion implantation condition;
• means for generating, for each of the Rp lines, a two-dimensional impurity concentration distribution or a three-dimensional impurity concentration distribution in accordance with two-dimensional vector coordinates provided to the Rp line;
• and
• means for performing device simulation for evaluating the electrical characteristic of the device structure of the semiconductor integrated circuit on the basis of the two-dimensional impurity concentration distribution or the three-dimensional impurity concentration distribution.