Dynamic compensation in advanced process control

A method of fabricating a semiconductor device, comprising:

• determining a target value of a first parameter based on a target value of a second parameter;
• operating a first fabrication tool in response to the target value of the first parameter;
• thereafter measuring an actual value of the first parameter;
• determining a target value of a third parameter based on the target value of the second parameter and the actual value of the first parameter;
• and
• operating a second fabrication tool in response to the target value of the third parameter;
• wherein the second parameter is a function of the first and third parameters.

A system for semiconductor fabrication, comprising:

• a modeling module that establishes a model for a device parameter of a wafer, the model being a function of first and second process parameters that correspond to respective different wafer characteristics, the model deriving target values of the first and second process parameters based on a specified target value of the device parameter;
• a first process tool coupled to the modeling module, the first process tool performing a first fabrication process in response to the target value of the first process parameter;
• a metrology tool coupled to the first process tool and the modeling module, the metrology tool measuring an actual value of the first process parameter;
• a second process tool coupled to the modeling module, the second process tool performing a second fabrication process in response to a revised target value of the second process parameter;
• wherein the revised target value of the second process parameter is derived by the modeling module based on the actual value of the first process parameter.