Substrate processing method

A substrate processing method comprising:

• receiving a substrate on which a mask layer and an intermediate layer are stacked over a target layer to be processed at a processing space formed between an upper electrode and a lower electrode;
• generating plasma of a processing gas in the processing space;
• and
• etching the substrate using the plasma, thereby forming a pattern shape in the target layer through the mask layer and the intermediate layer,
• wherein the etching includes a first etching step adapted to etch the mask layer by applying a DC voltage with the range of −150 to −600 V to the upper electrode, maintaining pressure in the processing space at 7 mTorr (9.31×10−1 Pa) or less, and maintaining an excitation power for generating the plasma in the range of 450 W to 800 W, and
• a second etching step adapted to etch the mask layer by applying a DC voltage of 0 V to the upper electrode, maintaining the pressure in the processing space at 7 mTorr (9.31×10−1 Pa) or less, and maintaining the excitation power the range of 450 W to 800 W.

A substrate processing method comprising:

• receiving a substrate on which a mask layer and an intermediate layer are stacked over a target layer to be processed at a processing space;
• generating plasma of a processing gas in the processing space;
• and
• etching the substrate using the plasma, thereby forming a pattern shape in the target layer through the mask layer and the intermediate layer,
• wherein the etching includes a third etching step adapted to etch the mask layer by applying a first excitation power for generating the plasma, and maintaining pressure in the processing space at 7 mTorr (9.31×10−1 Pa) or less, and
• a fourth etching step adapted to etch the mask layer by applying a second excitation power lower than the first excitation power, and maintaining pressure in the processing space at 7 mTorr (9.31×10−1 Pa) or less.