Micro pattern forming method
AssigneeTokyo Electron Limited
InventorsShigeru Nakajima, Kazuhide Hasebe, Pao-Hwa Chou, Mitsuaki Iwashita, Reiji Niino
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Abstract
There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.
Claims18
A micro pattern forming method comprising:
- forming a thin film on a substrate;
- forming a film serving as a mask when processing the thin film;
- processing the film serving as a mask into a pattern including lines having a preset pitch;
- trimming the pattern including the lines;
- and
- forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species,
- wherein the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.
A micro pattern forming method comprising:
- forming a thin film on a substrate;
- forming a film serving as a first mask when processing the thin film;
- processing the film serving as a first mask into a first pattern including lines having a preset pitch;
- trimming the first pattern in a film forming apparatus configured to form an oxide film;
- as a following process of trimming the first pattern, forming an oxide film on the first pattern trimmed in the process of trimming the first pattern and on the thin film by alternately supplying a source gas and an activated oxygen species into the film forming apparatus;
- forming a film serving as a second mask on the oxide film;
- processing the film serving as a second mask into a second pattern including lines having a preset pitch;
- and trimming the second pattern,
- wherein the thin film is processed by using, as masks, the first pattern on which the oxide film is formed and the trimmed second pattern.
Dependencies are inferred from the claim text.