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US 2011/0237078 A1Published application
SiC SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
AssigneeHitachi Metals, Ltd.
InventorTaisuke HIROOKA
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Abstract
A method of manufacturing a SiC substrate which has a first principal surface and a second principal surface, includes the step of removing, by a vapor phase etching process, at least a portion of a work-affected layer which is formed by mechanical flattening or cutting on the first principal surface of the SiC substrate.
Claims17
A method of manufacturing a SiC substrate comprising the steps of:
- providing a SiC substrate that has a first principal surface and a second principal surface, the first principal surface having a surface roughness of about 10 nm to about 1 μm and having a work-affected layer that is a portion of the SiC substrate including compressive stresses formed by mechanical flattening or cutting on the first principal surface;
- and
- removing, by reactive ion etching the first principal surface having the surface roughness of about 10 nm to about 1 μm, at least a portion of the work-affected layer that is a portion of the SiC substrate including compressive stresses;
- wherein
- the first principal surface is not subject to mirror polishing before the removing step.
2 more elements
Dependencies are inferred from the claim text.