Method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorsTAKASHI TONEGAWA, TOMOTAKE MORITA, NORIHIKO MATSUZAKA
Life of this patent
Estimating the term…
Abstract
The method of manufacturing a semiconductor device comprises forming a metal film over silicon regions and insulating films; performing a first heat treatment under an oxygen atmosphere containing oxygen as a main ingredient, to form a first silicide film in the silicon region by reacting the metal film and the silicon region, and to simultaneously form a metal oxide by oxidizing the entire surface of the metal film from the surface side thereof; and selectively removing the metal oxide and the unreacted metal film using a chemical.
Claims9
A method of manufacturing a semiconductor device, said semiconductor device comprises a silicide film in a silicon region, which comprises silicon as a main ingredient, isolated by an insulating film, comprising:
- forming a metal film over said silicon region and said insulating film;
- performing a first heat treatment under an oxygen atmosphere containing oxygen as a main ingredient, to form said silicide film in said silicon region by reacting said metal film and said silicon region, and to simultaneously form a metal oxide film by oxidizing the entire surface of said metal film from the surface side thereof;
- and
- selectively removing said metal oxide film and said unreacted metal film using a chemical solution.
Dependencies are inferred from the claim text.