Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorTatsuya Miyazaki
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first hole is formed in an insulating film. A seed layer, which covers an upper surface of the insulating film and an inner surface of the first hole, is formed. A first plating film is formed over the seed layer at a first growth rate. A second plating film is formed over the first plating film at a second growth rate that is higher than the first growth rate. A third plating film is formed over the second plating film at a third growth rate that is higher than the second growth rate.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a first hole in an insulating film;
- forming a seed layer covering an upper surface of the insulating film and an inner surface of the first hole;
- forming a first plating film over the seed layer at a first growth rate;
- forming a second plating film over the first plating film at a second growth rate that is higher than the first growth rate;
- and
- forming a third plating film over the second plating film at a third growth rate that is higher than the second growth rate.
A method of manufacturing a semiconductor device, comprising:
- forming a first hole in an insulating film;
- forming a seed layer covering an upper surface of the insulating film and an inner surface of the first hole;
- applying a first amount of current to the seed layer to form a first plating film over the seed layer;
- applying a second amount of current to the seed layer to form a second plating film over the first plating film, the second amount being larger than the first amount;
- and
- applying a third amount of current to the seed layer to form a third plating film over the second plating film, the third amount being larger than the second amount
A method of manufacturing a semiconductor device, comprising:
- forming a first hole in an insulating film;
- forming a second hole in the insulating film, the second hole being separated from the first hole, the second hole being larger in horizontal dimension than the first hole;
- forming a seed layer covering an upper surface of the insulating film and inner surfaces of the first and second holes;
- forming a first plating film over the seed layer;
- forming a second plating film over the first plating film, the second plating film filling up the first hole, the second plating film having a first portion in the second hole, and the lowest level of an upper surface of the first portion being lower than the level of the upper surface of the insulating film;
- and
- forming a third plating film over the second plating film, the third plating film filling up the second hole.
Dependencies are inferred from the claim text.