Method of manufacturing semiconductor device
AssigneeRohm Co., Ltd.
InventorShingo HIGUCHI
Life of this patent
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Abstract
A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.
Claims26
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first resin layer on a semiconductor chip having a passivation film formed on the outermost surface with an opening partially exposing a wire by supplying a resin material;
- patterning the first resin layer so that the first resin layer selectively remains on at least a portion of the wire facing the opening;
- forming a second resin layer on the semiconductor chip by supplying a resin material after patterning the first resin layer;
- forming a through-hole continuously passing through the first resin layer and the second resin layer in positions of the first resin layer and the second resin layer opposed to a portion of the wire exposed from the passivation film through the opening;
- and
- forming a pad so that an external connection terminal is arranged on the surface thereof by depositing a conductive material on a peripheral portion of the through-hole in the second resin layer and in the through-hole.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a resin layer on a semiconductor chip having a passivation film formed on the outermost surface with an opening partially exposing a wire by supplying a resin material;
- patterning the resin layer so that the thickness on at least a portion of the wire facing the opening is larger than the thickness of the remaining portion by forming a mask on a portion of the surface of the resin layer opposed to the opening and removing a portion of the resin layer exposed from the mask by a prescribed thickness;
- removing the mask and forming a through-hole passing through the resin layer in a portion of the resin layer exposed due to the removal of the mask after patterning the resin layer;
- and
- forming a pad so that an external connection terminal is arranged on the surface thereof by depositing a conductive material on a peripheral portion of the through-hole in the resin layer and in the through-hole.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a resin layer stacked on a semiconductor chip having a passivation film formed on the outermost surface with an opening partially exposing a wire by supplying a resin material;
- forming a through-hole passing through the resin layer in a position of the resin layer opposed to a portion of the wire exposed from the passivation film through the opening;
- and
- forming a pad by depositing a conductive material on a peripheral portion of the through-hole in the resin layer and in the through-hole, wherein
- the resin layer is formed such that the peripheral portion of the resin layer is thicker than the remaining portion of the resin layer other than the peripheral portion.
Dependencies are inferred from the claim text.