Methods of Manufacturing Stacked Semiconductor Devices

A method of manufacturing a stacked semiconductor device, the method comprising:

• providing a lower memory layer comprising a plurality of lower memory structures;
• forming an insulating layer on the lower memory layer;
• forming trenches by removing portions of the insulating layer;
• forming a first preparatory semiconductor layer in portions of the trenches;
• forming a first single crystalline semiconductor layer by phase-changing the first preparatory semiconductor layer;
• forming a second preparatory semiconductor layer on the first single crystalline semiconductor layer in other respective portions of the trenches;
• and
• forming a second single crystalline semiconductor layer by phase-changing the second preparatory semiconductor layer,
• wherein the first single crystalline semiconductor layer comprises a lower portion comprising a polycrystalline layer having a plurality of crystalline regions and an upper portion comprising a single crystalline layer formed by growing one of the plurality of crystalline regions in a single crystalline manner in an upward direction.

A method of manufacturing a stacked semiconductor device, the method comprising:

• providing a semiconductor layer comprising a plurality of lower memory structures;
• forming a preparatory semiconductor layer on the semiconductor layer;
• and
• forming a single crystalline semiconductor layer by phase-changing the preparatory semiconductor layer,
• wherein the single crystalline semiconductor layer comprises a lower portion comprising a polycrystalline layer having a plurality of crystalline regions and an upper portion comprising a single crystalline layer formed by growing one of the plurality of crystalline regions in a single crystalline manner in an upward direction.