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US 2011/0237052 A1Published application
Method for manufacturing semiconductor device
OwnerIchiro MIZUSHIMA, Shinji Moriinventors
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Abstract
According to an embodiment of the present invention, a method for manufacturing a semiconductor device includes: forming an epitaxial crystal from a seed crystal exposed between first and second structures; heating the epitaxial crystal at a temperature equal to or less than a melting point of the epitaxial crystal to migrate the epitaxial crystal; and migrating the epitaxial crystal to form plural aggregates between the first and second structures.
Claims18
A method for manufacturing a semiconductor device, comprising:
- forming an epitaxial crystal from a seed crystal exposed between first and second structures;
- heating the epitaxial crystal at a temperature equal to or less than a melting point of the epitaxial crystal to migrate the epitaxial crystal;
- and
- migrating the epitaxial crystal to form a plurality of aggregates between the first and second structures.
1 more element
A method for manufacturing a semiconductor device, comprising:
- forming an epitaxial crystal on a structure from a seed crystal exposed below the structure;
- heating the epitaxial crystal at a temperature equal to or less than a melting point of the epitaxial crystal to migrate the epitaxial crystal;
- and
- migrating the epitaxial crystal to form a plurality of aggregates on the structure.
1 more element
Dependencies are inferred from the claim text.