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US 2011/0237047 A1Published application
Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsSe-Aug Jang, Eun-Jeong Kim, Eun-Ha Lee
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Abstract
A method for fabricating a semiconductor device includes forming an isolation layer which defines an active region in a substrate, forming recess patterns in the active region and the isolation layer, baking a surface of the recess pattern by conducting an annealing process and forming a gate dielectric layer over a surface of the recess pattern by conducting an oxidation process.
Claims26
A method for fabricating a semiconductor device, comprising:
- forming an isolation layer which defines an active region in a substrate;
- forming recess patterns in the active region and the isolation layer;
- baking a surface of the recess pattern by conducting an annealing process;
- and
- forming a gate dielectric layer over a surface of the recess pattern by conducting an oxidation process.
2 more elements
A method for fabricating a semiconductor device, comprising:
- forming an isolation layer which defines an active region in a substrate;
- forming recess patterns in the active region and the isolation layer;
- performing a first oxidation process to bake a surface of the recess pattern and to form a first dielectric layer over a surface of the recess pattern in the active region;
- and
- performing a second oxidation process to form a second dielectric layer over the first dielectric layer.
2 more elements
Dependencies are inferred from the claim text.