Phase change memory cell and manufacturing method thereof using minitrenches

A process for manufacturing a phase change memory cell, comprising:

• forming a resistive element including a first thin portion having a first sublithographic dimension in a first direction;
• and
• forming a memory region of a phase change material and including a second thin portion having a second sublithographic dimension in a second direction transverse to said first direction;
• said first and second thin portions defining a contact area of sublithographic extension;
• wherein said step of forming the memory region includes forming a mold layer on top of said resistive element;
• forming a first lithographic opening in said mold layer;
• forming spacer portions in said first lithographic opening, said spacer portions defining a slit having said second sublithographic dimension;
• and
• depositing a phase change layer inside said slit.