Methods of manufacturing capacitor and semiconductor device including the same

A method of manufacturing a capacitor, comprising:

• forming a first insulation layer on a semiconductor substrate, the first insulation layer including a first opening;
• forming a first capacitor structure in the first opening, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode;
• forming a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode;
• forming at least one first contact pad on a side of the first electrode;
• and
• forming a wiring structure connecting the at least one first contact pad and the fourth electrode.

A method of manufacturing a semiconductor device, comprising:

• forming a transistor in a cell region of a substrate, the transistor including a plurality of impurity regions;
• forming a first insulation layer including:
• a plurality of first contact holes and a first opening, wherein the plurality of first contact holes at least partially exposes the plurality of impurity regions and the first opening at least partially exposes a surface of a logic region of the substrate, and
• forming a plurality of second contact plugs within the plurality of first contact holes;
• forming at least one third contact plug on at least one of the second contact plugs;
• forming a first capacitor structure within the first opening, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode;
• forming a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode;
• forming at least one first contact pad on a side of the first electrode;
• and
• forming a wiring structure connecting the at least one first contact pad and the fourth electrode.