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AssigneeRenesas Electronics Corporation
InventorsHiroyuki OHARA, Shino TAKAHASHI, Kenji KANAMITSU, Shuji MATSUO
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By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 μm, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi2) layer is formed on an upper portion of the gate electrode by salicide technique.
A manufacturing method of a semiconductor device forming a field-effect transistor of a first conductivity type, comprising the following steps:
A manufacturing method of a semiconductor device forming a field-effect transistor of a first conductivity type in a first region and forming a field-effect transistor of a second conductivity type different from the first conductivity type in a second region different from the first region, comprising the following steps:
23-32. (canceled)
Dependencies are inferred from the claim text.