Semiconductor Package and Method for Making the Same

A method for making a semiconductor package, comprising:

• (a) providing a substrate having a surface, wherein the surface has at least one first pad and at least one second pad;
• (b) forming a first passivation layer on the surface of the substrate, wherein the first passivation layer covers the surface of the substrate and has a first opening and a second opening, the first opening of the first passivation layer exposes the first pad, and the second opening of the first passivation layer exposes the second pad;
• (c) forming a first metal layer on the first passivation layer, wherein the first metal layer is electrically connected to the second pad;
• (d) forming a second passivation layer on the first metal layer, wherein the second passivation layer has a third opening and a fourth opening, the third opening of the second passivation layer overlaps the first opening of the first passivation layer so as to expose the first pad, and the fourth opening of the second passivation layer is vertically misaligned with the second opening of the first passivation layer and exposes part of the first metal layer;
• (e) forming a fourth metal layer on the second passivation layer;
• and
• (f) patterning the fourth metal layer, so as to form a second metal layer and a third metal layer, wherein the second metal layer is electrically connected to the first pad, and the third metal layer is electrically connected to the first metal layer.

A method for making a semiconductor package, comprising:

• (a) providing a substrate having a surface, wherein the surface has at least one first pad and at least one second pad;
• (b) forming a first passivation layer on the surface of the substrate, wherein the first passivation layer covers the surface of the substrate and exposes the first pad and the second pad;
• (c) forming a first metal layer on the first passivation layer, wherein the first metal layer is electrically connected to the second pad and has a first portion extending outside a periphery of the second pad;
• (d) forming a second passivation layer on the first metal layer, wherein the second passivation layer exposes the first pad and part of the first portion of the first metal layer;
• (e) forming a fourth metal layer on the second passivation layer;
• and
• (f) patterning the fourth metal layer, so as to form a second metal layer and a third metal layer, wherein the second metal layer directly contacts the first pad, and the third metal layer directly connects the first portion of the first metal layer.