US 2011/0237012 A1Published application

Method for fabricating novel high-performance field-effect transistor biosensor based on conductive polymer nanomaterials functionalized with anti-vegf adapter

AssigneeSnu R&Db Foundation

InventorsJyong Sik JANG, Oh Seok Kwon, Seon Joo Park

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Abstract

Disclosed is a method for fabricating a high-performance field-effect transistor biosensor for diagnosing cancers using micro conductive polymer nanomaterials funtionalized with anti-VEGF aptamer. Disclosed is a high-sensitivity field-effect transistor biosensor for diagnosing cancers using a micro conductive polymer nanomaterial transistor array including a micro polymer nanomaterial transistor array including a channel region provided with a metal source electrode, a metal drain electrode, a gate and micro polymer nanomaterials, and an anti-VEGF aptamer covalently bound to the surface of the micro polymer nanomaterials constituting the channel region of the micro polymer nanomaterials transistor array, to target VEGF (Vascular endothelial growth factor).

Claims7

Dependent claims

A method for fabricating a high-sensitivity field-effect transistor biosensor for diagnosing cancers, comprising:

(a) adding a surfactant to a nonpolar solvent at −20° C. to 0° C.;
(b) adding an aqueous solution of a metal salt and an oxidizing agent to the surfactant solution with stirring to form micelles having a cylinder shape;
(c) adding conductive polymer monomers and functional monomers to be copolymerized to the micelles dropwise to prepare one-dimensional conductive polymer nanomaterials with controlled surface functional groups;
(d) fixing the nanomaterials on an electrode substrate with a surface modified through chemical reaction;
(e) adhering an anti-VEGF aptamer to the surface of the nanomaterials through chemical reaction to obtain a sensor medium;
and
(f) providing a detector to detect variations in electrical properties of the sensor medium using a field-effect transistor array through a liquid-ion gate.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/766,280Filed 23 Apr 2010
Priority: KR 10-2010-002559523 Mar 2010
Published: 29 Sep 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

G01N 33/5438
Involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings: electrodes
G01N 27/4145
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS: specially adapted for biomolecules, e.g. gate electrode with…
G01N 27/4146
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS: involving nanosized elements, e.g. nanotubes, nanowires
Y10S 977/716
On an organic substrate: biological cell surface