Method for Forming a GaN-Based Quantum-Well LED with Red Light

A method for forming a GaN-based quantum-well LED with red light consisting of a sapphire substrate, a AlN layer, a GaN buffer layer, a GaN sustaining layer and a GaN/InGaN multi-quantum-well layer comprising:

• 1) using a MOCVD growth system, put a sapphire substrate in a MOCVD growth system;
• 2) heat the sapphire substrate at a temperature between 1000° C. and 1100° C., then feed ammonium to make surface-nitriding, or feed a metal organic source of Al to grow a 2-20 nm-thick AlN layer on Si substrate at a temperature between 1000° C. and 1100° C.;
• 3) feed carrier gas N2, ammonia and metal organic source into the MOCVD growth system at a temperature between 500° C. and 700° C. to grow a low temperature GaN buffer layer on the substrate said in step 2), said metal organic source is Ga source;
• 4) grow at a temperature between 1000° C. and 1150° C. more than 10 minutes to obtain a GaN sustaining layer which has a thickness more than 50 nm;
• 5) after the growth of GaN sustaining layer, feed SiH4 into the MOCVD growth system at a temperature between 900° C. and 1050° C. to grow a layer of Si-doped N type GaN;
• then feed Ga source and In source to grow 2-10 periods GaN/InGaN multiple-quantum-well structure which has a thickness GaN between 15 nm and 20 nm at a growth temperature between 700° C. and 900° C., and a thickness InGaN between 5 nm and 15 nm at a growth temperature between 600° C. and 800° C., wherein said Ga source is TMGa and In source is TMIn, a mole fraction x of InxGa1-xN of the multiple-quantum-well structure is controlled between 0.1 and 0.5 by temperature or flux of the TMIn, to ensure a wave length of light is between a range of 550 nm and 780 nm which performed as red;
• 6) by growing P type GaN layer with Mg doping concentration reaching to 3×1017 cm−3 to make LED device structure, and activate by annealing for 0.1-1 hour at a temperature between 600° C. and 800° C. to obtain the GaN-based GaN/InGaN quantum-well LED with red light grown upon sapphire or Si substrate.