Optoelectronic substrate and methods of making same
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsFabrice Letertre, Bruce Faure
Life of this patent
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Abstract
A method of fabricating a device by providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 106, with the nitrogen face of the nitride layer facing the auxiliary substrate; depositing at least one epitaxial nitride layer on the exposed opposite face of the nitride layer of the structure; depositing a further metal layer over at least a portion of the epitaxial nitride layer(s); bonding a final substrate on the deposited metal layer; and removing the auxiliary substrate to form the device from the final substrate and deposited layers. Preferably, the device that is formed includes a LED or laser.
Claims15
A method of fabricating a device which comprises:
- providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 106, with the nitrogen face of the nitride layer facing the auxiliary substrate;
- depositing at least one epitaxial nitride layer on the exposed opposite face of the nitride layer of the structure;
- depositing a further metal layer over at least a portion of the epitaxial nitride layer(s);
- bonding a final substrate on the deposited metal layer;
- and
- removing the auxiliary substrate to form the device from the final substrate and deposited layers.
Dependencies are inferred from the claim text.