Double Patterning Method
AssigneeSanDisk 3D LLC
InventorMichael CHAN
Life of this patent
Estimating the term…
Abstract
A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, where the second photoresist pattern is a second grid which overlaps the first grid to form a photoresist web, and etching the underlying layer using the photoresist web as a mask.
Claims22
A method of making a device, comprising:
- forming a first photoresist layer over an underlying layer;
- patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, the first grid comprising a pattern of continuous intersecting bars of material of the first photoresist layer;
- rendering the first photoresist pattern insoluble to a solvent;
- forming a second photoresist layer over the first photoresist pattern;
- patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, the second photoresist pattern comprising a second grid which overlaps the first grid to form a photoresist web, the second grid comprising a pattern of continuous intersecting bars of material of the second photoresist layer;
- and
- etching the underlying layer using the photoresist web as a mask.
A method of making a device, comprising:
- forming a first patternable layer over an underlying layer;
- patterning the first patternable layer to form a first patterned layer comprising first patterned lines extending in a first direction;
- forming a second patternable layer over the first patterned layer;
- patterning the second patternable layer to form a second patterned layer over the underlying layer, the second patterned layer comprising second patterned lines extending in a second direction different from the first direction;
- filling openings between the first and the second patterned layers with a masking material to form a masking material pattern;
- removing the first and the second patterned layers;
- and
- patterning the underlying layer using the masking material pattern.
A method of making a device, comprising:
- forming a first patternable layer over an underlying layer;
- patterning the first patternable layer to form a first patterned layer comprising a first grid pattern, the first grid pattern comprising a pattern of continuous intersecting bars of material of the first patterned layer;
- forming a second patternable layer over the first grid pattern;
- patterning the second patternable layer to form a second patterned layer over the underlying layer, the second patterned layer comprising a second grid pattern which overlaps the first grid pattern to form a web pattern, the second grid pattern comprising a pattern of continuous intersecting bars of material of the second patterned layer;
- and
- etching the underlying layer using the web pattern as a mask.
Dependencies are inferred from the claim text.