Clean bench and method of producing raw material for single crystal silicon

A method of producing a raw material for single crystal silicon comprising:

• depositing a column-shaped polycrystalline silicon by a reaction with raw gas including chlorosilane gas and hydrogen gas;
• crushing the column-shaped polycrystalline silicon into a plurality of lumps of polycrystalline silicon or cutting the column-shaped polycrystalline silicon into rod-shaped polycrystalline silicon with a predetermined length;
• washing the polycrystalline silicon using an acid to remove impurities adhering to a surface thereof;
• immersing the washed polycrystalline silicon in a pure water bath to remove the remaining acid from the surface thereof;
• drying the polycrystalline silicon taken out of the pure water bath by being put in a drier;
• and
• cleaning the polycrystalline silicon by removing static electricity from the surface of the polycrystalline silicon having been dried,
• wherein, in the cleaning process, the polycrystalline silicon is cleaned by being exposed to the clean air on the worktable of a clean bench comprising:
• a worktable on which polycrystalline silicon is placed;
• a box part which includes side plates to surround three sides except a front face of a working space above the worktable and which includes a vertically extending part, extending from the bottom to the top of the box part, and an upper extending part, extending above the working space;
• a ceiling plate, which covers an upper side of the working space, with supplying holes formed in the ceiling plate of the box part, which supply air from the upper extending part onto an upper surface of the worktable;
• an ionizer, which ionizes the air supplied from the supplying holes to the working space and removes static electricity on the worktable;
• suction holes formed in the side plate of the box part, which suction air from the working space;
• a closed loop communicative route which communicates between the suction holes and the supplying holes;
• a partition dividing the vertically extending part from the upper extending part;
• a blower, which sends the air to the upper extending part, is provided in the vertically extending part and is disposed to contact with the partition;
• and
• a worktable communicative route connecting a working surface of the worktable to the communicative route at a lower side surface of the worktable.

A method of producing a raw material for single crystal silicon comprising:

• depositing a column-shaped polycrystalline silicon by a reaction with raw gas including chlorosilane gas and hydrogen gas;
• crushing the column-shaped polycrystalline silicon into a plurality of lumps of polycrystalline silicon or cutting the column-shaped polycrystalline silicon into rod-shaped polycrystalline silicon with a predetermined length;
• washing the polycrystalline silicon using an acid to remove impurities adhering to the surface thereof;
• immersing the washed polycrystalline silicon in a pure water bath to remove the remaining acid from the surface of the polycrystalline silicon;
• drying the polycrystalline silicon taken out of the pure water bath by being put in a drier;
• and
• cleaning the polycrystalline silicon by removing static electricity from the surface of the polycrystalline silicon having been dried,
• wherein in the cleaning process, the polycrystalline silicon is exposed to clean air to remove static electricity by being put on a worktable while supplying ionized clean air toward the polycrystalline silicon and discharging the clean air to a side of the worktable.