Optical modulator and manufacturing method therefor
AssigneeMitsubishi Electric Corporation
InventorTakeshi Yamatoya
Life of this patent
Estimating the term…
Abstract
An optical modulator includes a modulation region for modulating light, and a passive region adjacent the modulation region. The modulation region and the passive region include, in common, a semiconductor substrate, an n-type cladding layer on the semiconductor substrate, a core layer on the n-type cladding layer, and a p-type cladding layer on the core layer. The modulation region further includes a contact layer on the p-type cladding layer, and a P-side electrode on the contact layer. The passive region further includes an undoped cladding layer between the core layer and the p-type cladding layer.
Claims6
An optical modulator comprising:
- a modulation region for modulating light;
- and
- a passive region adjacent said modulation region, wherein
- said modulation region and said passive region include, in common, a semiconductor substrate, an n-type cladding layer on said semiconductor substrate, a core layer on said n-type cladding layer, and a p-type cladding layer on said core layer,
- said modulation region further includes a contact layer on said p-type cladding layer, and a P-side electrode on said contact layer, and
- said passive region further includes a first undoped cladding layer between said core layer and said p-type cladding layer.
A method of manufacturing an optical modulator including a modulation region for modulating light and a passive region adjacent said modulation region, the method comprising:
- forming an n-type cladding layer, a core layer, a lower undoped cladding layer, an etch stop layer, and an upper undoped cladding layer, in that order, on a semiconductor substrate;
- forming an etching mask in said passive region and, thereafter, etching said upper undoped cladding layer in said modulation region;
- removing said etch stop layer in said modulation region;
- removing said etching mask and, thereafter, forming a p-type cladding layer and a contact layer, in that order, on said lower undoped cladding layer in said modulation region and on said upper undoped cladding layer in said passive region;
- removing said contact layer in said passive region;
- and
- forming a P-side electrode on said contact layer in said modulation region.
Dependencies are inferred from the claim text.