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US 2011/0235452 A1Published application
Semiconductor memory device and method for operating the same
AssigneeHynix Semiconductor Inc.
InventorsKwi-Dong Kim, Ki-Chang Kwean
Life of this patent
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Abstract
A semiconductor memory device including an information storage unit comprising a fuse configured to store information, a control unit configured to control a node of a blown fuse to become a floating state in response to a control pulse signal, and an output unit configured to output the information.
Claims18
A semiconductor memory device comprising:
- an information storage unit comprising a fuse configured to store information;
- a control unit configured to control a node of a blown fuse to become a floating state in response to a control pulse signal;
- and
- an output unit configured to output the information.
1 more element
A semiconductor memory device comprising:
- an information storage unit comprising a fuse configured to store information;
- a voltage driving unit configured to control a first node of a blown fuse to have at least the substantially same voltage level as a second node of the blown fuse in response to a control pulse signal;
- and
- an output unit configured to output the information.
1 more element
A method for operating a semiconductor memory device, the method comprising:
- outputting information stored in a fuse to an output unit in response to a selection signal;
- and
- changing a voltage level of a node of the fuse to reduce a difference of the voltage level of the node with a voltage level of another node of the fuse.
Dependencies are inferred from the claim text.