Semiconductor memory device

A semiconductor memory device, comprising:

• a dielectric film configured to store information depending on presence or absence of a conductive path therein;
• a first number of first electrodes provided to contact a first surface of the dielectric film;
• and
• a second number of second electrodes provided to contact a second surface of the dielectric film,
• the conductive path being able to be formed between one electrode arbitrarily selected from the first electrodes and one electrode arbitrarily selected from the second electrodes,
• the conductive path having a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction, and
• the largest possible number of the conductive paths that may be formed being N×M, when the first number is N and the second number is M.

A semiconductor memory device, comprising:

• a plurality of first lines provided parallel with one another;
• a plurality of second lines formed to intersect the plurality of first lines;
• a plurality of memory cells, each of the memory cells including a dielectric film configured to store information depending on presence or absence of a conductive path therein and a plurality of electrodes provided to contact a first surface of the dielectric film;
• and
• a plurality of transistors provided between one of the electrodes of the memory cells and one of the plurality of the first line respectively,
• the conductive path being able to be formed between two electrodes arbitrarily selected from the plurality of electrodes,
• the conductive path having a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction, and
• gate electrodes of the plurality of transistors each connected to the electrodes of one of the memory cells are connected to one of the second lines.