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US 2011/0235404 A1Published application
Pulse reset for non-volatile storage
AssigneeSanDisk 3D LLC
InventorRoy E. Scheuerlein
Life of this patent
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Abstract
A non-volatile storage system includes a substrate, control circuitry on the substrate, a three dimensional memory array (above the substrate) that includes a plurality of memory cells with reversible resistance-switching elements, and circuits to SET and RESET the resistance-switching elements. The circuits that RESET the resistance-switching elements provide a pulse to the memory cells that is large enough in magnitude to SET and RESET the memory cells, and long enough to potentially RESET the memory cell but not long enough to SET the memory cells.
Claims22
A non-volatile storage system, comprising:
- a non-volatile storage element;
- a voltage providing circuit that selectively provides a programming voltage, the non-volatile storage element changes from a first predetermined resistance state to a second predetermined resistance state in response to a first voltage magnitude, the non-volatile storage element changes from the second predetermined resistance state to the first predetermined resistance state in response to a second voltage magnitude, the second voltage magnitude is larger than the first voltage magnitude, the programming voltage is at least as large the second voltage magnitude;
- and
- a selection circuit that receives a pulse, the selection circuit selectively connects the non-volatile storage element to the voltage providing circuit for a first period of time during the pulse to change the non-volatile storage element in the first period of time to the second predetermined state, the first period of time is shorter than needed to change the non-volatile storage element to the first predetermined resistance state in response to the programming voltage, the selection circuit connects the non-volatile storage element to an unselected control voltage before and after the pulse.
1 more element
The non-volatile storage system of claim 3, wherein the voltage providing circuit comprises:
- a third switch receiving the programming voltage at a first terminal and a selection signal at a second terminal;
- and
- a data line in communication with the first switch and a third terminal of the third switch, the third switch selectively provides the programming voltage to the data line in response to the selection signal.
A non-volatile storage system, comprising:
- a non-volatile storage element;
- and
- an electrical circuit in communication with the non-volatile storage element, the electrical circuit programs the non-volatile storage element from a first predetermined resistance state to a second predetermined resistance state by a applying a programming voltage to the non-volatile storage element for a first period of time in response to a pulse, the electrical circuit applies an unselected control voltage to the non-volatile storage element before and after the pulse, the non-volatile storage element changes from the first predetermined resistance state to the second predetermined resistance state in response to a first voltage magnitude, the non-volatile storage element changes from the second predetermined resistance state to the first predetermined resistance state in response to a second voltage magnitude that is larger than the first voltage magnitude, the programming voltage is at least as large as the second voltage magnitude, the first period of time is shorter than needed to change the non-volatile storage element to the first predetermined resistance state in response to the programming voltage.
A method for programming non-volatile storage, comprising:
- accessing a pulse signal that provide a pulse;
- in response to the pulse, applying a programming voltage for a first period of time to program a non-volatile storage element from a first predetermined resistance state to a second predetermined resistance state during the first period of time, the non-volatile storage element changes from the first predetermined resistance state to the second predetermined resistance state in response to a first voltage magnitude, the non-volatile storage element changes from the second predetermined resistance state to the first predetermined resistance state in response to a second voltage magnitude that is larger than the first voltage magnitude, the programming voltage is at least as large as the second voltage magnitude, the first period of time is shorter than needed to change the non-volatile storage element to the first predetermined resistance state in response to the programming voltage;
- and
- applying an unselected control voltage to the non-volatile storage element before and after the pulse.
1 more element
A method for programming a non-volatile storage element, comprising:
- receiving a pulse;
- receiving a programming voltage, the non-volatile storage element changes from a first predetermined resistance state to a second predetermined resistance state in response to a first voltage magnitude, the non-volatile storage element changes from the second predetermined resistance state to the first predetermined resistance state in response to a second voltage magnitude, the second voltage magnitude is larger than the first voltage magnitude, the received programming voltage is at least as large the second voltage magnitude;
- and
- in response to the pulse, connecting the non-volatile storage element to the programming voltage for a first period of time to program the non-volatile storage element from the first predetermined resistance state to the second predetermined resistance state during the first period of time, the first period of time is shorter than needed to change the non-volatile storage element to the first predetermined resistance state in response to the programming voltage.
1 more element
Dependencies are inferred from the claim text.