High density memory device
AssigneeInternational Business Machines Corporation
InventorsTymon Barwicz, Keith A. Jenkins, Supratik Guha
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Abstract
A memory device and a method of forming the same are provided. The memory device includes a substrate; a set of electrodes disposed on the substrate; a dielectric layer formed between the set of electrodes; and a transition metal oxide layer formed between the set of electrodes, the transition metal oxide layer configured to undergo a metal-insulator transition (MIT) to perform a read or write operation.
Claims19
A memory device structure, comprising:
- a substrate;
- a set of electrodes disposed on the substrate;
- a dielectric layer formed between the set of electrodes;
- and
- a transition metal oxide layer formed between the set of electrodes, the transition metal oxide layer configured to undergo a metal-insulator transition (MIT) to perform a read or write operation.
A memory device, comprising:
- a substrate;
- a set of electrodes disposed on the substrate;
- a dielectric layer formed between the set of electrodes;
- a transition metal oxide layer formed between the set of electrodes;
- and
- a power source configured to apply a voltage across the set of electrodes, the voltage applied across the set of electrodes causing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to transition between a capacitive state and a resistive state to perform a read or write operation on the memory device.
A method of operating a memory device having a dielectric material layer, a transition metal oxide layer and a set of electrodes each formed over a substrate, comprising:
- applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to undergo a metal-insulation transition (MIT) to perform a read or write operation on memory device.
Dependencies are inferred from the claim text.