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US 2011/0235388 A1Published application
Nonvolatile semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroaki Nakano, Osamu Wada
Life of this patent
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Abstract
According to an embodiment of the invention, a nonvolatile semiconductor storage device includes a first memory cell and a second memory cell. A first fuse element in which data can be electrically written only once is provided in the first memory cell. A second fuse element in which data can be electrically written only once is provided in the second memory cell to repair a defect of the first memory cell.
Claims20
A nonvolatile semiconductor storage device comprising:
- a first memory cell in which a first fuse element is provided, data being able to be electrically written only once in the first fuse element;
- and
- a second memory cell in which a second fuse element is provided to repair a defect of the first memory cell, data being able to be electrically written only once in the second fuse element.
A nonvolatile semiconductor storage device comprising:
- a memory cell in which a fuse element is provided, data being able to be electrically written only once in the fuse element;
- and
- a repair controller that inverts data read from the memory cell based on a result of reference to defective bit information indicating whether or not the memory cell is defective and outputs the inverted data.
A nonvolatile semiconductor storage device comprising:
- a memory cell array in which memory cells are arrayed in a form of a matrix in a row direction and a column direction, data being able to be electrically written only once in the memory cells;
- a control information storage unit that stores storage states of memory cells in the same row;
- and
- a control circuit that controls reading of data from the memory cells in the same row based on a result of reference to the control information storage unit.
1 more element
Dependencies are inferred from the claim text.