Semiconductor Memory Device and Manufacturing Method of the Same

A semiconductor device comprising:

• (a) a plurality of data lines extending along a first direction;
• (b) a plurality of word lines extending along a second direction perpendicular to the first direction;
• and
• (c) a plurality of memory cells disposed at respective intersecting regions at which the plurality of data lines and the plurality of word lines intersect in plan view,
• wherein the plurality of memory cells are arranged in a matrix to form a memory cell array,
• wherein each memory cell is a semiconductor memory device that stores information based on change of an electric current flowing through the data lines,
• wherein a plurality of word-line contact plugs respectively connected to the plurality of word lines are formed of a repeating pattern of a set of four word line contact plugs,
• wherein, for each set of word-line contact plugs:
• two of the word-line contact plugs, that are sequential and respectively connected to two of the corresponding word lines that are adjacent, are provided to a first side of the memory cell array, and
• the other two of the word-line contact plugs, that are sequential and respectively connected to the other two of the corresponding word lines that are adjacent, are provided to a second side of the memory cell array.