Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure

Abstract

Provided are an anti-reflection structure using surface plasmons and a high-k dielectric material, and a method of manufacturing the anti-reflection structure. The anti-reflection structure may include a high-k dielectric layer formed on a substrate, the high-k dielectric layer configured to allow incident light to pass therethrough, and a nano-material layer on the high-k dielectric layer. The high-k dielectric layer may include at least one of zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), tantalum oxide (Ta2O5), lanthanum oxide (La2O3), yttrium oxide (Y2O3) and aluminum oxide (Al2O3).

Dependencies are inferred from the claim text.