Illumination optics for euv microlithography

An illumination optics configured to illuminate an object in an object field with an EUV used radiation beam, the illumination optics comprising:

• an illumination intensity preset device configured to illuminate the object field with an intensity distribution;
• an illumination angle preset device configured to illuminate the object field with an angle distribution;
• and
• an illumination correction device configured to correct at least one parameter selected from the group consisting of the intensity distribution of the object field and the angle distribution of the object field, the illumination correction device comprising:
• a diaphragm arrangement in a region of a plane selected from the group consisting of an object field plane of the illumination optics and a plane conjugate to an object the object field plane of the illumination optics, the diaphragm arrangement comprising a plurality of finger diaphragms displaceable along a displacement direction along which the object is displaced during a projection exposure;
• a detector configured to measure a position of the EUV used radiation beam in the region of the object field;
• an evaluation device in signal communication with the detector, the evaluation device configured to evaluate data from the detector and to convert the detector data into control signals;
• and
• an actuator in signal communication with the evaluation device, the actuator configured to vary a relative position between the EUV used radiation beam and the diaphragm arrangement,
• wherein:
• the illumination correction device is configured so that, during an illumination period, edges of the used radiation beam have a maximum displacement toward the finger diaphragms in a direction perpendicular to a beam direction of the used radiation beam;
• the maximum displacement is 8 μm;
• and
• the illumination optics is an EUV microlithography illumination optics.