US 2011/0234936 A1 · HIGH LIGHT TRANSMITTANCE IN-PLANE SWITCHING LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract

The present disclosure relates to a horizontal electric field type liquid crystal display device having the horizontal electric fields over the pixel electrodes and the common electrodes which are disposed on the same level plane, and a method for manufacturing the same. The horizontal electric field type liquid crystal display device comprising: a substrate; a gate line and a data line crossing each other with a gate insulating layer therebetween, and defining a pixel area on the substrate; a thin film transistor formed where the gate line and the data line is crossing; a pixel electrode contacting the thin film transistor on the gate insulating layer; a common electrode disposed in parallel with the pixel electrode having a predetermined distance; and a passivation layer covering whole surface of the substrate including the pixel electrode and the common electrode. According to the present disclosure, as all liquid crystal molecules including molecules disposed right over the pixel electrodes and the common electrodes are driven by the horizontal electric field, the light transmittance and the aperture ratio are enhanced.

Claims12

Dependent claims

A horizontal electric field type liquid crystal display device comprising:

a substrate;
a gate line and a data line crossing each other with a gate insulating layer therebetween, and defining a pixel area on the substrate;
a thin film transistor formed where the gate line and the data line is crossing;
a pixel electrode contacting the thin film transistor on the gate insulating layer;
a common electrode disposed in parallel with the pixel electrode having a predetermined distance;
and
a passivation layer covering whole surface of the substrate including the pixel electrode and the common electrode.

4 more elements

A manufacturing method of a high light transmittance in-plane switching liquid crystal display device comprising:

a first mask process for forming gate elements by depositing and patterning a gate metal on a substrate;
a second mask process for completing a thin film transistor by depositing a gate insulating layer, a semiconductor material and a source-drain metal sequentially, and by patterning the semiconductor material and the source-drain metal to form source-drain elements;
a third mask process for forming a pixel electrode connecting the thin film transistor and a commone electrode disposed in parallel with the pixel electrode having a predetermined distance by depositing and patterning a transparent conductive material on the gate insulating layer;
and
a fourth mask process for forming a gate contact hole exposing some portions of the gate elements and a data contact hole exposing some portions of the source-drain elements by depositing and patterning a passivation layer on the whole surface of the substrate having the pixel electrode and the common electrode, and for forming a gate terminal and a data terminal filling in the gate contact hole and the data contact hole, respectively.

2 more elements

Dependencies are inferred from the claim text.

High light transmittance in-plane switching liquid crystal display device and method for manufacturing the same

Life of this patent

High light transmittance in-plane switching liquid crystal display device and method for manufacturing the same

Life of this patent

Abstract

Claims12