Image sensor with double charge transfer for large dynamic range and method of reading
AssigneeE2V Semiconductors
InventorJacques Leconte
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AssigneeE2V Semiconductors
InventorJacques Leconte
Estimating the term…
The invention relates to image sensors with active pixels. To obtain a wide dynamic operating range, the pixels are read by performing a double charge integration, during periods of different values (Ti1, Ti2). The result of the first integration (period Ti1) is sampled (command SHS1) in a sampling capacitor, and the result of the second integration (period Ti2) is conditionally sampled (command SHS2) in the same capacitor. This second sampling depends on the observation of the potential of the column conductor after the integration of charges corresponding to the longer period; this potential is compared to a threshold. If the comparison indicates a risk of saturation, the information collected during the shorter period is collected and retained in the sampling capacitor in order for it to be multiplied by a coefficient representing the ratio between the longer period and the shorter period. If the comparison indicates that there is no risk of saturation, the information collected during the longer period is collected and retained in the sampling capacitor. The shorter period is, in principle, the first period.
A method for reading charges deriving from pixels of an image capture matrix, in which the pixels of one and the same row are addressed simultaneously for each to establish, on a respective column conductor linked to a read circuit, a potential representing the charges generated by the lighting of this pixel, and in which a pixel comprises at least one photodiode, a charge storage node, and a row selection transistor for linking the storage node to the column conductor or isolating it from this conductor, the integration of charges in the photodiode and the reading of the charges being done according to the following sequence of operations:
An image sensor in MOS technology, comprising a matrix of pixels organized in rows and in columns, the pixels of one and the same column being linked to a column conductor which is in turn linked to a read circuit, each pixel comprising a photodiode linked by a transfer transistor to a storage node, and a row selection transistor for linking the storage node to the column conductor or isolating it from this conductor, the sensor comprising means for performing, during one and the same cycle of integration and of reading of the charges of a pixel, two charge transfers, the first after a first integration period, the second after a second integration period different from the first, and a means for sampling in a sampling capacitor the potential level taken by the column conductor after the first charge transfer, wherein it further comprises a means for evaluating the potential taken by the column conductor after the longer of the two periods, a means for replacing or not replacing, depending on the result of the evaluation, the content of the sampling capacitor with the level of the second potential taken by the column conductor after the second charge transfer, and a means for supplying a digital output signal which is,
Dependencies are inferred from the claim text.