Silicon-on-Insulator High Power Amplifiers
AssigneePurdue Research Foundation
InventorsSaeed Mohammadi, Sultan R. Helmi, Jing-Hwa Chen, Andrew J. Robison
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Abstract
Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.
Claims20
A power amplifier comprising:
- a plurality of amplifier cells each having an input and an output, the plurality of amplifier cells being formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series, wherein each of the plurality of amplifier cells comprises:
- a first transistor that is electrically insulated from the semiconductor substrate;
- and
- a first feedback resistor configured to dynamically bias the first transistor.
A power amplifier comprising:
- a plurality of silicon-on-insulator (SOI) transistors that are electrically coupled in a series stack, wherein an output of the power amplifier is provided across the series stack;
- and
- a plurality of biasing networks configured to dynamically bias each SOI transistor.
A differential power amplifier comprising:
- a first stack of series-connected, dynamically biased transistors formed on a silicon-on-insulator substrate;
- a second stack of series-connected, dynamically biased transistors formed on the silicon-on-insulator substrate;
- and
- a plurality of inductors, each of the plurality of inductors coupling a node between a pair of transistors in the first stack to a corresponding node between a pair of transistors in the second stack.
Dependencies are inferred from the claim text.