Multiple-junction photoelectric device and its production process
AssigneeUniversite de Neuchatel
InventorsThomas Soderstrom, Franz-Joseph Haug, Xavier Niquille
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AssigneeUniversite de Neuchatel
InventorsThomas Soderstrom, Franz-Joseph Haug, Xavier Niquille
Estimating the term…
A multiple-junction photoelectric device includes a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration, on which a second conducting layer is deposited, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, top and bottom faces, the latter having a peak-valley roughness >150 nm, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so α90bottom<α90top by at least 3; where α90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination ≦this angle, and α90bottom is the angle for which 90% of the elementary surfaces of the surface of the bottom face of the intermediate layer have an inclination ≦this angle.
1-17. (canceled)
A multiple-junction photoelectric device comprising a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration, on which a second conducting is deposited, and at least one intermediate layer provided between two adjacent elementary photoelectric devices, wherein said intermediate layer has, on the incoming light side, an top face and, on the other side, a bottom face, said bottom face having a peak to valley roughness greater than 150 nm, and wherein said top and bottom faces have respectively a surface morphology comprising inclined elementary surfaces such that α90bottom is smaller than α90top by at least 3°, where α90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and α90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.
A process for producing a multiple-junction photoelectric device comprising a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration on which a second conducting layer is deposited, wherein it includes a step of depositing, on at least one of said elementary photoelectric devices, an intermediate layer having, on the incoming light side, an top face and, on the other side, a bottom face, said bottom face having a peak to valley roughness greater than 150 nm, and said top and bottom faces having respectively a surface morphology comprising inclined elementary surfaces such that α90bottom is smaller than α90top by at least 3°, where α90top is the angle for which 90% of the surface of the top face of the intermediate layer contains elementary surfaces having an inclination equal to or less than this angle, and α90bottom is the angle for which 90% of the surface of the bottom face of the intermediate layer contains elementary surfaces having an inclination equal to or less than this angle.
Dependencies are inferred from the claim text.