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US 2011/0221328 A1Published application
Thermionic Electron Emitters/Collectors Have a Doped Diamond Layer with Variable Doping Concentrations
AssigneeNorth Carolina State University
InventorsRobert J. Nemanich, Franz A. M. Koeck
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Abstract
A thermionic electron emitter/collector includes a substrate and a doped diamond electron emitter/collector layer on the substrate. The doped diamond electron emitter/collector layer has at least a first and a second doping concentration as a function of depth such that the first doping concentration is different from the second doping concentration.
Claims29
A thermionic electron emitter/collector comprising:
- a substrate;
- and
- a doped diamond electron emitter/collector layer on the substrate, the doped diamond electron emitter/collector layer having at least a first and a second doping concentration as a function of depth such that the first doping concentration is different from the second doping concentration.
A method of forming a thermionic emitter/collector, comprising:
- forming a doped diamond electron emitter/collector layer on a substrate, the doped diamond electron emitter/collector layer comprising a first doping concentration and a second doping concentration as a function of depth such that the first doping concentration is different from the second doping concentration.
A thermionic electron emitter/collector comprising:
- a substrate;
- and
- a doped boron nitride electron emitter/collector layer on the substrate, the doped boron nitride electron emitter/collector layer having at least a first and a second doping concentration as a function of depth such that the first doping concentration is different from the second doping concentration.
Dependencies are inferred from the claim text.