Design Rule Optimization in Lithographic Imaging Based on Correlation of Functions Representing Mask and Predefined Optical Conditions
AssigneeASML Netherlands B.V.
InventorRobert John Socha
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AssigneeASML Netherlands B.V.
InventorRobert John Socha
Estimating the term…
Methods, computer program products and apparatuses for optimizing design rules for producing a mask are disclosed, while keeping the optical conditions (including but not limited to illumination shape, projection optics numerical aperture (NA) etc.) fixed. A cross-correlation function is created by multiplying the diffraction order functions of the mask patterns with the eigenfunctions from singular value decomposition (SVD) of a TCC matrix. The diffraction order functions are calculated for the original design rule set, i.e., using the unperturbed condition. ILS is calculated at an edge of a calculated image of a critical polygon using the cross-correlation results and using translation properties of a Fourier transform. The use of the calculated cross-correlation of the mask and the optical system, and the translation property of the Fourier transform for perturbing the design reduces the computation time needed for determining required changes in the design rules. Once an optimum separation is calculated, it is incorporated into the design rule to optimize the mask layout for improved ILS throughout the mask, including critical and non-critical portions of the mask.
A method of optimizing an initial design rule into an updated design rule for producing a mask layout to be imaged by a lithographic apparatus, the method comprising:
A computer program product comprising a computer-readable medium having instructions recorded therein, which when executed, cause the computer to generate files corresponding to a mask layout having a plurality of polygons to be imaged by a lithographic apparatus, the generation of the files comprising the steps of:
A method of generating a design rule defining relative positioning of polygons in an integrated circuit design, the design rule being usable for producing a mask layout for a mask for a lithographic apparatus comprising predefined optical conditions, the method comprising the steps of:
Dependencies are inferred from the claim text.