Device and method for producing dielectric layers in microwave plasma
AssigneeHQ-Dielectrics GmbH
InventorsWilfried Lerch, Zsolt Nenyel, Thomas Theiler
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AssigneeHQ-Dielectrics GmbH
InventorsWilfried Lerch, Zsolt Nenyel, Thomas Theiler
Estimating the term…
A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) comprising a coaxial inner conductor (21) made of electrically conductive material and a coaxial outer conductor (22) made of electrically conductive material and surrounding the inner conductor at least partially and being disposed at a distance thereto, and a plasma ignition device (23) that is connected to the coaxial inner conductor (21), characterized in that the coaxial outer conductor (22) comprises at least one first partial region (31) in which it completely surrounds the coaxial inner conductor (21) along the longitudinal axis thereof and comprises at least one further partial region (32) in which it surrounds the coaxial inner conductor (21) partially such that microwave radiation generated by the microwave generator (20) can exit in the at least one further partial region (32) substantially perpendicular to the longitudinal axis of the coaxial inner conductor (21).
1-38. (canceled)
A microwave plasma device, comprising at least one electrode (21, 22, 23) which is connectable to a microwave generator (20), wherein the at least one electrode (21, 22, 23) comprises a coaxial inner conductor (21) made from electrically conductive material as well as a coaxial outer conductor (22) made from electrically conductive material, which at least partially surrounds the coaxial inner conductor and is spaced therefrom;
A device for semiconductor processing, comprising:
Dependencies are inferred from the claim text.