Photoresist removing processor and methods

A method for removing photoresist from a wafer, comprising:

• placing the wafer on a fixture in a closed chamber;
• irradiating and heating a surface of the wafer via infrared lamps in a heater assembly outside of the chamber, with infrared energy radiating through a window of the chamber directly onto the surface of the wafer;
• contacting the wafer with sulfuric acid and hydrogen peroxide, with the sulfuric acid and hydrogen peroxide and infrared radiation reacting to remove photoresist from the surface of the wafer;
• and
• actively cooling the heater assembly.

A method for removing photoresist from a 12 inch diameter wafer, comprising:

• placing the wafer on a fixture in a closed chamber;
• irradiating a surface of the wafer via infrared radiation;
• and
• applying no more than a combined volume 100 ml of hydrogen peroxide and sulfuric acid onto the wafer, with the hydrogen peroxide, sulfuric acid and infrared radiation reacting to remove photoresist from the surface of the wafer.