Semiconductor device and manufacturing method thereof
AssigneeFujitsu Semiconductor Limited
InventorNaoyoshi Tamura
Life of this patent
Estimating the term…
Abstract
A semiconductor device and manufacturing method thereof capable of improving an operating speed of a MOSFET using an inexpensive structure. The method comprises the steps of forming a stress film to cover a source, drain, sidewall insulating layer and gate of the MOSFET and forming in the stress film a slit extending from the stress film surface toward the sidewall insulating layer. As a result, an effect of allowing local stress components in the stress films on the source and the drain to be relaxed by local stress components in the stress film on the gate is suppressed by the slit.
Claims6
A method for manufacturing a semiconductor device having a MOS field-effect transistor, comprising the steps of:
- forming a stress film to cover a source, a drain, a sidewall insulating layer and a gate;
- and
- forming in the stress film a slit extending from a surface of the stress film toward the sidewall insulating layer.
Dependencies are inferred from the claim text.