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US 2011/0217846 A1Published application
Method for manufacturing semiconductor device
AssigneePanasonic Corporation
InventorsKatsuhiko ONISHI, Shin-ichi Imai
Life of this patent
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Abstract
To prevent the occurrence of short circuit or abnormality of wiring resistance values, a semiconductor wafer is subjected to nitrogen plasma treatment after one of the following steps is over; a step of providing a resist pattern on an inter-layer insulation film and then dry-etching the inter-layer insulation film, and a step of dry-etching a stressor SiN film after the resist pattern is removed.
Claims12
A method for manufacturing a semiconductor device, including:
- a first step for forming a stressor SiN film on a gate electrode formed on a semiconductor substrate;
- a second step for forming an inter-layer insulation film on the stressor SiN film;
- a third step for providing a resist pattern on the inter-layer insulation film and then dry-etching the inter-layer insulation film;
- a fourth step for removing the resist pattern and then dry-etching the stressor SiN film;
- and
- a fifth step for subjecting the semiconductor substrate to nitrogen plasma treatment after the third step or the fourth step.
3 more elements
A method for manufacturing a semiconductor device, including:
- a first step for forming a stressor SiN film on a gate electrode formed on a semiconductor substrate;
- a second step for forming an inter-layer insulation film on the stressor SiN film;
- a third step for providing a resist pattern on the inter-layer insulation film and then dry-etching the inter-layer insulation film;
- and
- a fourth step for removing the resist pattern and then dry-etching the stressor SiN film, wherein
- at least the third step and the fourth step in the first-fourth steps are performed after the semiconductor substrate is placed in a chamber, and
- the method further including a fifth step for introducing CO into the chamber after the third step or the fourth step is over.
4 more elements
A method for manufacturing a semiconductor device, including:
- a first step for forming a stressor SiN film on a gate electrode formed on a semiconductor substrate;
- a second step for forming an inter-layer insulation film on the stressor SiN film;
- a third step for providing a resist pattern on the inter-layer insulation film and then dry-etching the inter-layer insulation film;
- a fourth step for removing the resist pattern and then dry-etching the stressor SiN film;
- and
- a fifth step for retaining the semiconductor substrate under a nitrogen atmosphere after the third step or the fourth step is over.
3 more elements
Dependencies are inferred from the claim text.