Method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorRyou Satou
Life of this patent
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Abstract
The present invention provides a method of manufacturing a semiconductor device. The method includes stacking a SiO2 film, a N-containing stopper film, and a resist pattern in this order on a semiconductor substrate, performing etching on the stopper film and the SiO2 film with a F-containing etching gas, with the resist pattern serving as a mask to form an opening, and performing ashing on the resist pattern to remove the resist pattern, using a gas containing an oxygen gas and an inert gas under the condition that the ratio of the oxygen radical to the inert-gas radical becomes equal to or lower than 5.
Claims10
A method of manufacturing a semiconductor device, comprising:
- stacking an insulating film, a N-containing stopper film, and a resist pattern in this order on a semiconductor substrate;
- etching said stopper film and said insulating film with a F-containing etching gas using said resist pattern as a mask, to form an opening;
- and
- performing ashing to remove said resist pattern by using a gas containing an oxygen gas and an inert gas under a condition that a ratio of an oxygen radical to an inert-gas radical becomes equal to or lower than 5, after said etching.
Dependencies are inferred from the claim text.