Method for forming interconnect structure having airgap
AssigneeASM Japan K.K.
InventorsJulian J. Hsieh, Nobuyoshi Kobayashi, Akira Shimizu, Kiyohiro Matsushita, Atsuki Fukazawa
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Abstract
A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.
Claims18
A method for forming an interconnect structure with airgaps, comprising:
- providing a structure having a trench formed on a substrate;
- depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers;
- filling the trench having the sidewall spacers with copper;
- removing the sidewall spacers to form an airgap structure;
- and
- encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.
Dependencies are inferred from the claim text.