Method of filling a deep trench in a substrate
OwnerDigvijay Raorane, Khalid M. Sirajuddin +2inventors
InventorsDigvijay Raorane, Khalid M. Sirajuddin, Jon C. Farr, Sharma V. Pamarthy
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Abstract
Methods of filling deep trenches in substrates are described. A method includes providing a substrate with a deep trench formed therein. The method also includes forming a dielectric layer conformal with the substrate and the deep trench. The method also includes, with the entire portion of the dielectric layer conformal with the deep trench exposed, removing at least a portion, but not all, of the dielectric layer at the top of the deep trench with a relatively low bias plasma etch process.
Claims20
A method of filling a deep trench in a substrate, the method comprising:
- providing a substrate with a deep trench formed therein;
- forming a dielectric layer conformal with the substrate and the deep trench;
- and, with the entire portion of the dielectric layer conformal with the deep trench exposed,
- removing at least a portion, but not all, of the dielectric layer at the top of the deep trench with a relatively low bias plasma etch process.
A method of filling a deep trench in a substrate, the method comprising:
- providing a substrate with a deep trench formed therein;
- forming a dielectric layer conformal with the substrate and the deep trench;
- and, with the entire portion of the dielectric layer conformal with the deep trench exposed,
- removing all of the dielectric layer at the bottom of the deep trench with a relatively high bias plasma etch process.
Dependencies are inferred from the claim text.