Plasma doping method and apparatus

Abstract

There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.

Dependencies are inferred from the claim text.